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Product Data Sheet
December 16, 2002
DC - 12 GHz Discrete HFET
TGF4230-SCC
Key Features and Performance
* * * * * * Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 m HFET 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in) Bias at 8 Volts, 96 mA
Primary Applications
* * * Cellular Base Stations High dynamic-range LNAs Military and Space
Description
The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4230-SCC is readily assembled using automatic equipment. For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002
TGF4230-SCC
TABLE I MAXIMUM RATINGS SYMBOL VDS VGS PD TCH TSTG TM PARAMETER 1/ Drain to Source Voltage Gate to Source Voltage Range Power Dissipation Operating Channel Temperature Storage Temperature Mounting Temperature (30 seconds) VALUE 12 V 0 to -5.0 Volts See Thermal Data 150C -65 to 150C 320C NOTES
2/, 3/
1/ These ratings represent the maximum values for this device. Stresses beyond those listed under "Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "DC Probe Characteristics" and "Electrical Characteristics" is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability. 2/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ These ratings apply to each individual FET
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002
TGF4230-SCC
TABLE II DC PROBE CHARACTERISTICS (TA = 25 C, Nominal) Symbol IDSS GM VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum --1 17 17 Typical 294 198 1.85 22 22 Maximum --3 30 30 Unit mA mS V V V Note 1/ 1/ 2/ 2/ 2/
1/ Total for two FETS 2/ VP, VBGS, and VBGD are negative.
T A B L E III E L E C T R IC A L C H A R A C T E R IS T IC S ( T A = 2 5 C , N o m in a l) B ia s C o n d itio n s : V d = 8 V , Id = 5 0 m A + /- 1 0 % , @ 8 .5 G H z S ym b o l Pout Gp PAE P a ra m e te r O u tp u t P o w e r P o w e r G a in P o w e r A d d e d E ff ic ie n c y T y p ic a l 2 8 .5 10 55 U n it dBm dB %
Note: The recommended bias current for HFETs is 80 mA/mm. For this 1.2 mm HFET IQ is 96 mA.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002 TYPICAL PERFORMANCE
TGF4230-SCC
EXAMPLE OF DC I-V CURVES
OUTPUT POWER VS. INPUT POWER
POWER ADDED EFFICIENCY VS. INPUT POWER
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002 TYPICAL PERFORMANCE
TGF4230-SCC
GAIN VS. INPUT POWER
DRAIN CURRENT VS. INPUT POWER
*
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002
TGF4230-SCC
THERMAL INFORMATION
PREDICTED CHANNEL TEMPERATURE VS. BASE TEMPERATURE at 0.51 W and 1.02 W dissipated power
HFET CHANNEL TEMPERATURE VS. MEDIAN LIFE
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002
TGF4230-SCC
MODELED SPARAMETERS Frequency (GHz) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 MAG 0.985 0.959 0.931 0.908 0.891 0.880 0.871 0.865 0.861 0.858 0.856 0.855 0.854 0.854 0.854 0.855 0.855 0.856 0.857 0.858 0.859 0.860 0.862 0.863 0.864 0.866 0.867 0.869 S11 ANG() -29.88 -56.20 -77.47 -94.02 -106.82 -116.82 -124.76 -131.19 -136.48 -140.92 -144.69 -147.94 -150.78 -153.29 -155.53 -157.54 -159.37 -161.04 -162.58 -164.01 -165.34 -166.58 -167.76 -168.87 -169.93 -170.94 -171.91 -172.84 S 21 MAG ANG() 8.095 7.297 6.368 5.512 4.791 4.202 3.723 3.330 3.004 2.732 2.501 2.304 2.133 1.984 1.852 1.736 1.632 1.539 1.455 1.378 1.308 1.244 1.186 1.131 1.081 1.034 0.991 0.950 161.49 145.18 131.86 121.22 112.62 105.49 99.42 94.11 89.37 85.06 81.09 77.39 73.90 70.59 67.43 64.40 61.49 58.67 55.95 53.30 50.73 48.23 45.79 43.41 41.09 38.83 36.62 34.46 S 12 MAG ANG() 0.021 0.038 0.050 0.057 0.062 0.065 0.067 0.068 0.069 0.069 0.069 0.068 0.068 0.067 0.066 0.065 0.065 0.064 0.063 0.061 0.060 0.059 0.058 0.057 0.056 0.055 0.053 0.052 72.66 58.80 47.65 39.12 32.60 27.55 23.56 20.34 17.70 15.51 13.67 12.12 10.82 9.72 8.80 8.05 7.45 7.00 6.68 6.49 6.43 6.51 6.71 7.05 7.52 8.12 8.86 9.74 S 22 MAG ANG( ) 0.343 0.328 0.312 0.301 0.295 0.294 0.297 0.302 0.309 0.319 0.329 0.340 0.352 0.364 0.377 0.390 0.404 0.417 0.430 0.444 0.457 0.470 0.483 0.496 0.509 0.521 0.534 0.546 -22.22 -41.75 -57.46 -69.57 -78.80 -85.89 -91.41 -95.80 -99.38 -102.37 -104.94 -107.18 -109.19 -111.03 -112.73 -114.32 -115.84 -117.29 -118.68 -120.03 -121.35 -122.63 -123.89 -125.11 -126.32 -127.51 -128.68 -129.82
VDS = 8.0 V and 30% IDSS at T = 25C
FET Elements LG = 0.0421nH RG = 0.43 W RGS = 81700 W R1 = 1.21W CGS = 1.21 pF CDG = 0.1004 pF
RDG = 204000 W RS = 0.4 W LS = 0.015 nH RDS = 98.01 W CDS = 0.25325 pF RD = 0.66 W LD = 0.022 nH
VCCS Parameters M = 132.9 mS A=0 R1 = 1E19 W R2 = 1E19 W F=0 T = 5.49 pS
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002
TGF4230-SCC
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 16, 2002
TGF4230-SCC
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Die are shipped in gel pack unless otherwise specified.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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